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TBD

Virkemåte

TBD

Transistorer

PartnrMarkingKallenavnVCEVCE_SATTvjmaxICpulsRth(j-C)td(on)td(off)
IRG4PC50WPBF
God gammel600V2.25V150°C220A0.64K/W31ns210ns
STGW30NC60WDGW30NC60WDθ600V2.5V150°C150A0.63K/W29ns151ns
IKW30N60TFKSA1K30T60Ny teit600V2.05V175°C90A0.8K/W24ns292ns
WG50N65DHWQWG50NSemigod650V2V150°C200A0.45K/W62ns170ns
IGW75N65H5XKSA1G75EH5Galaxy brain650V1.65V175°C300A0.38K/W27ns194ns


ParameterBeskrivelse
VCEKollektor - Emitter Breakdown voltage
VCE_SATCollector-emitter saturation voltage (max)
TvjmaxMax junction temperature
ICpuls

Max Pulsed collector current, tp limited by Tvjmax

Rth(j-C)

IGBT thermal resistance, junction - case

td(on)Turn-on delay time (at Tj = 150C)
td(off)Turn-off delay time (at Tj = 150C)


View file
nameTK531_Utgangstrinn.PDF
height250

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